EGP20A - EGP20K — 2.
0 A Glass-Passivated Hi
gh-Efficiency Rectifiers
? 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
EGP20A - EGP20K Rev. 1.1.0 1
June 2013
EGP20A - EGP20K
2.0 A Glass-Passivated High-Efficiency Rectifiers
Features
? Glass-Passivated Cavity-Free Junction
? High Surge Current Capability
? Low Leakage Current
? Super-Fast Recovery Time for High Efficiency
? Low Forward Voltage, High Current Capability
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA
= 25°C unless otherwise noted.
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol Parameter Value Units
IF(AV)
Average Rectified Current
.375 inch lead length at TA
= 55
°C
2.0 A
IFSM
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
75 A
TJ, TSTG
Junction and Storage Temperature Range -65 to 150
°C
PD
Total Device Dissipation
3.13
W
Derate above 25°C
25
mW°C
RθJA
Thermal Resistance, Junction to Ambient 40
°C/W
RθJL
Thermal Resistance, Junction to Lead 15
°C/W
DO-15 Glass case
COLOR BAND DENOTES CATHODE
相关PDF资料
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EGP50GHE3/54 DIODE 5A 400V 50NS GP20 AXIAL
ES1C-13-F DIODE SUPER FAST SMD 150V 1A SMA
ES1C DIODE FAST 1A 150V SMA
ES1H DIODE FAST 1A 500V SMA
ES1PDHM3/84A DIODE 1A 200V DO-220AA SMP
ES2C DIODE FAST 2A 150V SMB
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